Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node
Structural advancements of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) without punch-through-stopper (PTS) were introduced using fully calibrated TCAD for the first time. It is challenging to scale down conventional bulk FinFETs into 5-nm technology node due to the sub-fin leakage i...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8731862/ |