A New Study on the Temperature and Bias Dependence of the Kink Effects in <i>S</i><sub>22</sub> and <i>h</i><sub>21</sub> for the GaN HEMT Technology

A New Study on the Temperature and Bias Dependence of the Kink Effects in <i>S</i><sub>22</sub> and <i>h</i><sub>21</sub> for the GaN HEMT Technology

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (<i>S</i><sub>22</sub>) and the short-circuit current-gain (<i>h</i><sub>21</sub>) of solid-state electronic de...

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Bibliographic Details
Main Authors: Giovanni Crupi, Antonio Raffo, Valeria Vadalà, Giorgio Vannini, Alina Caddemi
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Electronics
Subjects:
equivalent circuit
GaN
HEMT
scattering parameter measurements
solid-state electronic device
Online Access:https://www.mdpi.com/2079-9292/7/12/353

Internet

https://www.mdpi.com/2079-9292/7/12/353

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