The influence of low energy argon ion irradiation on generation of electrically active defects in silicon

The influence of low energy argon ion irradiation on generation of electrically active defects in silicon

The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...

Full description

Bibliographic Details
Main Authors: Popov V. M., Shustov Y. M., Klimenko A. S., Pokanevich A. P.
Format: Article
Language:English
Published: Politehperiodika 2009-08-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
electrically active defects
silicon
ion irradiation
scanning electron microscopy
photosensitivity
Schottky diodes
Online Access:http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zip

Internet

http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zip

Similar Items