Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor
The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide-semiconductor (CMOS)-compatible technology—by...
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| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Biosensors |
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| Online Access: | https://www.mdpi.com/2079-6374/11/4/119 |
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doaj-e187ed1b52f24b6db7ee77bb455d211a |
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| record_format |
Article |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Kristina A. Malsagova Tatyana O. Pleshakova Andrey F. Kozlov Rafael A. Galiullin Vladimir P. Popov Fedor V. Tikhonenko Alexander V. Glukhov Vadim S. Ziborov Ivan D. Shumov Oleg F. Petrov Vladimir M. Generalov Anastasia A. Cheremiskina Alexander G. Durumanov Alexander P. Agafonov Elena V. Gavrilova Rinat A. Maksyutov Alexander S. Safatov Valentin G. Nikitaev Alexander N. Pronichev Vladimir A. Konev Alexander I. Archakov Yuri D. Ivanov |
| spellingShingle |
Kristina A. Malsagova Tatyana O. Pleshakova Andrey F. Kozlov Rafael A. Galiullin Vladimir P. Popov Fedor V. Tikhonenko Alexander V. Glukhov Vadim S. Ziborov Ivan D. Shumov Oleg F. Petrov Vladimir M. Generalov Anastasia A. Cheremiskina Alexander G. Durumanov Alexander P. Agafonov Elena V. Gavrilova Rinat A. Maksyutov Alexander S. Safatov Valentin G. Nikitaev Alexander N. Pronichev Vladimir A. Konev Alexander I. Archakov Yuri D. Ivanov Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor Biosensors SOI nanoribbon silicon-on-insulator influenza A virus antibody |
| author_facet |
Kristina A. Malsagova Tatyana O. Pleshakova Andrey F. Kozlov Rafael A. Galiullin Vladimir P. Popov Fedor V. Tikhonenko Alexander V. Glukhov Vadim S. Ziborov Ivan D. Shumov Oleg F. Petrov Vladimir M. Generalov Anastasia A. Cheremiskina Alexander G. Durumanov Alexander P. Agafonov Elena V. Gavrilova Rinat A. Maksyutov Alexander S. Safatov Valentin G. Nikitaev Alexander N. Pronichev Vladimir A. Konev Alexander I. Archakov Yuri D. Ivanov |
| author_sort |
Kristina A. Malsagova |
| title |
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor |
| title_short |
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor |
| title_full |
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor |
| title_fullStr |
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor |
| title_full_unstemmed |
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor |
| title_sort |
detection of influenza virus using a soi-nanoribbon chip, based on an n-type field-effect transistor |
| publisher |
MDPI AG |
| series |
Biosensors |
| issn |
2079-6374 |
| publishDate |
2021-04-01 |
| description |
The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide-semiconductor (CMOS)-compatible technology—by means of gas-phase etching and standard optical photolithography. The surface of the SOI nanoribbon chip contains a matrix of 10 nanoribbon (NR) sensor elements. SOI nanoribbon chips of n-type conductance have been used for this study. For biospecific detection of target particles, antibodies against influenza virus have been covalently immobilized onto NRs. Influenza A virus detection was performed by real-time registration of the source-drain current through the NRs. The detection of the target viral particles was carried out in buffer solutions at the target particles concentration within the range from 10<sup>7</sup> to 10<sup>3</sup> viral particles per milliliter (VP/mL). The lowest detectable concentration of the target viral particles was 6 × 10<sup>−16</sup> M (corresponding to 10<sup>4</sup> VP/mL). The use of solutions containing ~10<sup>9</sup> to 10<sup>10</sup> VP/mL resulted in saturation of the sensor surface with the target virions. In the saturation mode, detection was impossible. |
| topic |
SOI nanoribbon silicon-on-insulator influenza A virus antibody |
| url |
https://www.mdpi.com/2079-6374/11/4/119 |
| work_keys_str_mv |
AT kristinaamalsagova detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT tatyanaopleshakova detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT andreyfkozlov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT rafaelagaliullin detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT vladimirppopov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT fedorvtikhonenko detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexandervglukhov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT vadimsziborov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT ivandshumov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT olegfpetrov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT vladimirmgeneralov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT anastasiaacheremiskina detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexandergdurumanov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexanderpagafonov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT elenavgavrilova detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT rinatamaksyutov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexanderssafatov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT valentingnikitaev detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexandernpronichev detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT vladimirakonev detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT alexanderiarchakov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor AT yuridivanov detectionofinfluenzavirususingasoinanoribbonchipbasedonanntypefieldeffecttransistor |
| _version_ |
1721529647155380224 |
| spelling |
doaj-e187ed1b52f24b6db7ee77bb455d211a2021-04-12T23:01:22ZengMDPI AGBiosensors2079-63742021-04-011111911910.3390/bios11040119Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect TransistorKristina A. Malsagova0Tatyana O. Pleshakova1Andrey F. Kozlov2Rafael A. Galiullin3Vladimir P. Popov4Fedor V. Tikhonenko5Alexander V. Glukhov6Vadim S. Ziborov7Ivan D. Shumov8Oleg F. Petrov9Vladimir M. Generalov10Anastasia A. Cheremiskina11Alexander G. Durumanov12Alexander P. Agafonov13Elena V. Gavrilova14Rinat A. Maksyutov15Alexander S. Safatov16Valentin G. Nikitaev17Alexander N. Pronichev18Vladimir A. Konev19Alexander I. Archakov20Yuri D. Ivanov21Laboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaJSC Novosibirsk Plant of Semiconductor Devices with OKB, 630082 Novosibirsk, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaJoint Institute for High Temperatures of Russian Academy of Sciences, 125412 Moscow, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaFederal Budgetary Research Institution—State Research Center of Virology and Biotechnology VECTOR, Federal Service for Surveillance on Consumer Rights Protection and Human Well-Being, 630559 Novosibirsk Region, Koltsovo, RussiaNational Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, RussiaNational Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, RussiaDepartment of Infectious Diseases in Children, Faculty of Pediatrics, Pirogov Russian National Research Medical University, 117997 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaLaboratory of Nanobiotechnology, Institute of Biomedical Chemistry, 119121 Moscow, RussiaThe detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide-semiconductor (CMOS)-compatible technology—by means of gas-phase etching and standard optical photolithography. The surface of the SOI nanoribbon chip contains a matrix of 10 nanoribbon (NR) sensor elements. SOI nanoribbon chips of n-type conductance have been used for this study. For biospecific detection of target particles, antibodies against influenza virus have been covalently immobilized onto NRs. Influenza A virus detection was performed by real-time registration of the source-drain current through the NRs. The detection of the target viral particles was carried out in buffer solutions at the target particles concentration within the range from 10<sup>7</sup> to 10<sup>3</sup> viral particles per milliliter (VP/mL). The lowest detectable concentration of the target viral particles was 6 × 10<sup>−16</sup> M (corresponding to 10<sup>4</sup> VP/mL). The use of solutions containing ~10<sup>9</sup> to 10<sup>10</sup> VP/mL resulted in saturation of the sensor surface with the target virions. In the saturation mode, detection was impossible.https://www.mdpi.com/2079-6374/11/4/119SOInanoribbonsilicon-on-insulatorinfluenza A virusantibody |