Ferroelectric switching in epitaxial GeTe films
In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers r...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4881735 |