Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate vol...
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2015-06-01
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Online Access: | http://dx.doi.org/10.1063/1.4921068 |
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doaj-ea2180b4977744e6a096b3852ec944672020-11-24T22:19:46ZengAIP Publishing LLCAPL Materials2166-532X2015-06-0136062805062805-610.1063/1.4921068017592APMMagneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructuresW. Liu0S. Gariglio1A. Fête2D. Li3M. Boselli4D. Stornaiuolo5J.-M. Triscone6Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, SwitzerlandWe report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.http://dx.doi.org/10.1063/1.4921068 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
W. Liu S. Gariglio A. Fête D. Li M. Boselli D. Stornaiuolo J.-M. Triscone |
spellingShingle |
W. Liu S. Gariglio A. Fête D. Li M. Boselli D. Stornaiuolo J.-M. Triscone Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures APL Materials |
author_facet |
W. Liu S. Gariglio A. Fête D. Li M. Boselli D. Stornaiuolo J.-M. Triscone |
author_sort |
W. Liu |
title |
Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures |
title_short |
Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures |
title_full |
Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures |
title_fullStr |
Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures |
title_full_unstemmed |
Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures |
title_sort |
magneto-transport study of top- and back-gated laalo3/srtio3 heterostructures |
publisher |
AIP Publishing LLC |
series |
APL Materials |
issn |
2166-532X |
publishDate |
2015-06-01 |
description |
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating. |
url |
http://dx.doi.org/10.1063/1.4921068 |
work_keys_str_mv |
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