Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition
The CuxSi1−x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η”-Cu3Si formed...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4948976 |