Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation
We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and characterized by the la...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985825 |