Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe<sub>2</sub> for Artificial Synaptic Features

Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe<sub>2</sub> for Artificial Synaptic Features

The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. In order to...

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Bibliographic Details
Main Authors: Shania Rehman, Muhammad Farooq Khan, Mehr Khalid Rahmani, Honggyun Kim, Harshada Patil, Sobia Ali Khan, Moon Hee Kang, Deok-kee Kim
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Nanomaterials
Subjects:
MoTe<sub>2</sub> transistor
chemical synapse
neuromorphic
charge trapping and artificial synaptic
Online Access:https://www.mdpi.com/2079-4991/10/12/2326

Internet

https://www.mdpi.com/2079-4991/10/12/2326

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