In&#x2080;.&#x2085;&#x2083;Ga&#x2080;.&#x2084;&#x2087;As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz <italic>f<sub>&#x03C4;</sub></italic> and 256 GHz <italic>f</italic><sub>max</sub>

In&#x2080;.&#x2085;&#x2083;Ga&#x2080;.&#x2084;&#x2087;As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz <italic>f<sub>&#x03C4;</sub></italic> and 256 GHz <italic>f</italic><sub>max</sub>

In<sub>0</sub>.<sub>53</sub>Ga<sub>0</sub>.<sub>47</sub>As/InAs composite channel MOS-HEMT exhibiting peak f<sub>&#x03C4;</sub> = 511 GHz and peak f<sub>max</sub> = 285 GHz is demonstrated. Additionally, another device exhib...

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Bibliographic Details
Main Authors: Brian Markman, Simone Tommaso Suran Brunelli, Aranya Goswami, Matthew Guidry, Mark J. W. Rodwell
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InAs
MOSFETs
MOSHEMTs
RF
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Online Access:https://ieeexplore.ieee.org/document/9170561/

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https://ieeexplore.ieee.org/document/9170561/

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