Design and performance analysis of 1-Bit FinFET full adder cells for subthreshold region at 16 nm process technology
The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing trans...
Main Authors: | Abdul Tahrim, Aqilah (Author), Huei, Chaeng Chin (Author), Cheng, Siong Lim (Author), Loong, Michael Peng Tan (Author) |
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Format: | Article |
Language: | English |
Published: |
Hindawi Publishing Corporation,
2015.
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Subjects: | |
Online Access: | Get fulltext |
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