Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs

Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs

MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal...

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Bibliographic Details
Main Authors: Boles, T. (Author), Carlson, D. (Author), Xia, L. (Author), Kaleta, A. (Author), McLean, C. (Author), Jin, D. (Author), Palacios, Tomas (Contributor), Turner, George W. (Contributor), Molnar, Richard J. (Contributor)
Other Authors: Lincoln Laboratory (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: 2018-06-05T17:10:27Z.
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