Direct band gap narrowing in highly doped Ge

Direct band gap narrowing in highly doped Ge

Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band ga...

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Main Authors: Han, Zhaohong (Contributor), Cai, Yan (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2013-07-31T14:58:25Z.
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