Deep-UV Light Emitting Diodes: An Experimental Investigation of Characterization and Optimization Techniques

• Main Author: Fraser, Eric M.
• Format: Others
• Published: Scholarship @ Claremont 2005
• Subjects: Light emitting diodes; Physics; Transmission electron microscopy; Laser diodes; AlGaN; AlN; Astrophysics and Astronomy; Physical Sciences and Mathematics
• Online Access: http://scholarship.claremont.edu/pomona_theses/11; http://scholarship.claremont.edu/cgi/viewcontent.cgi?article=1010&context=pomona_theses

Light emitting diodes (LEDs) and laser diodes (LDs) have many advantages over conventional light sources. Current commercial LEDs span the spectrum from IR to near- UV. There are a variety of applications for devices that extend into the deep-UV, including biological agent detection and optical storage. The nitride material system is a set of semiconducting compounds that have wavelengths that span a broad range, from yellow to deep-UV. AlGaN has a direct bandgap that extends into the deep-UV range; we will try to grow device-quality material, deposited epitaxially using metalorganic chemical vapor deposition on sapphire substrates.