A Study on the Low-Frequency Noise in the GaAs MESFETS
碩士 === 國立臺灣科技大學 === 工程技術研究所 === 77 === Due bo the demand on the high speed electronic system, the importance of the Gallium- Arsenide devices become essential. In recent years GaAs MESFETs have been applied to the digital or microwave circuits such as low-fre- quency small signal amplifiers, o...
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| Format: | Others |
| Language: | zh-TW |
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1989
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12820947317375767573 |