Thermal Oxidation of Lightly and Heavily Doped Silicon in N2O and Its Device Applications
碩士 === 國立交通大學 === 電子研究所 === 81 === High quality ultrathin oxide is requireed for deep submicron MOS devices. Recently, a new technique to grow thin thin gate dielectrics by oxidizing silicon substrates in pure N2O has been gaining wide att...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1983
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70901250965490234092 |