| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 81 === High quality ultrathin oxide is requireed for deep submicron
MOS devices. Recently, a new technique to grow thin thin gate
dielectrics by oxidizing silicon substrates in pure N2O has
been gaining wide attentions. However, there is an uncertainly
whether the growth of Si in N2O ambient is self-limiting.In
this study,we present extensive results of thermal oxidation of
lightly and heavily doped silicon in N2O, and demonstrate that
the thermal oxidation of silicon in pure N2O is not self-
llmiting.The interesting phenomena of silicon enhanced
oxidation on heavily doped substrates and oxide thickness
crossover of (110) and (111) in the initial stage of oxidation
have also been observed in N2O oxidation. The devices
application utilizing N2O oxidation was used to study the
electrical characteristics of MOSFET's with TEOS deposited gate
oxides. Results show that devices of TEOS oxide with N2O
anneal have smaller drain current degradation under CHC stress
condition. The transconductance degradation is slightly worse
as compared to thermal gate oxide devices.
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