| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 83 === In this thesis, p-type δ-doped GaAs and δ-doped In0.2Ga0.8As/
GaAs p-HFETs'were grown by LP-MOCVD. In addition, we carried
out the SIMS profiles, X-ray measurement, and Hall-measurement
at room temperature and liquid nitrogen temperature to
demonstrate the film quality. In order to obtain optimum
parameters, we varied the DEZn flow rate and chose the
thickness of the GaAs spacer and In0.2Ga0.8As channel
carefully. For the δ-doped In0.2Ga0.8As/GaAs p-HFETs', the
maximum extrinsic transconductance were 15 mS/mm at 300 K and
25 mS/mm at 77 K due to the proper choice of the strained In0.2
Ga0.8As channel. In addition, the hole mobility and 2DHG
concentration at 300 (77) K were 260 (2600) cm2/V-s and 2E12
(5.5E11) cm-2, respectively. A wide-range high transconductance
versus gate voltage region was also obtained. To improve p-
HFETs' is very important to realize the low-power-dissipation
and high performance complementary HFETs'.
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