The Fabrication of High Output Current Amorphous Silicon Germanium Infrared Detector

• Main Authors: Chung-Yang Tsao, 曹峻源
• Other Authors: Yean-Kuen Fang
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/53961131941693602488

碩士 === 國立成功大學 === 電機工程研究所 === 83 === Up to now,in the actual application of the Infrared detector is limited by the small photoconduct current and an amplifier shall be used to enlarge the output current to drive a LED or other devices. The circuit with such design usually suffers noise magnification from the amplifier. Higher production cost and area occupied by the entire system are also the shortcomings of this kind of detector. In the thesis,a new infrared detetor has been sucessfully developed by the plasma enhanced chemical vaporphase deposition ( PECVD ) method on the silicon wafer. To achieve the goal of output current,one device called mental amorphous semiconductor switch ( MASS )is used for the amplification of output while the other device amorphous silicon-germanium alloy based the optical detector in the infrared range is used to detect the desired light wavelength. The integrated device has the following specification: Optical absorbtion peak of the spectrum appears at 905 nm. The maximum output current is 3.2 mA under the load resistance 1K The rise time of the photoresponse is 465uS while the fall time 375uS under the load resistance is 1K ohm.