Study on Reliability of Ultrathin NO-oxynitride and Its Applications for ULSI
碩士 === 國立交通大學 === 電子研究所 === 83 === As device dimensions are scaled down into the deep-submicron regime, ultrathin gate dielectric films with excellent physical and electrical properties are required. The nitrided gate dielectrics can fulfi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25645283001401264123 |