The Applications of InGaP/GaAs and AlGaAs/GaAs Hetero- structures in Optoelectronic Devices
博士 === 國立中央大學 === 光電(科學)研究所 === 83 === The alloys of InGaP and InGaAsP lattice-matched to GaAs have been successfully grown by low-pressure organometallic vapor phase epitaxy (LP-OMVPE) technology. Based on the well established growth conditions, the 980...
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| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65796918618217346595 |