Defect Pattern Quantization on Wafer Map and Its Applicationns

• Main Author: 古建維
• Other Authors: 陳竹一
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/13565963517641988635

碩士 === 中華大學 === 電機工程研究所 === 85 === In this paper, a novel approach is proposed for defect pattern quantization on wafer map, which makes the defect patterns on the wafer map to be abstracted, recorded, and analyzed effectively and efficiently. By analyzing the syndrome of defect pattern distribution on wafer map, two parameters named NBS and NDS, are used to characterize the quantity of bad dice and the clustering effect of defect pattern. Firstly, A-chart is constituted by a set of two parameters, NBS and NDS, of defect pattern on a wafer. There has exist a shape of boom on A-Chart for random defect distribution. By combining the fail bin and defect patterns with the occurrence frequency of NBS and NDS, they constitute a new chart, B-chart, to represent the difference of individual defect patterns occurring on a wafer for each fail bin. Error classification for either known or unknown defect sources can be conducted by using A-chart and B-chart. Accordingly, a relationship between proposed parameter and defect density is derived and it can be fitted up to beyond 40% yield. A/B-charting method can be used as a low-cost and real time monitoring of defect source analysis and hence for yield improvement in semiconductor testing and manufacturing.