| Summary: | 碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The reduction of contact resistance is significant to fabricate
device and obtain best performance. Doping method focus on the
implantation and in-situ before, the former cause different
damages affecting characterization ofdevice and the later cost
too much time in tuning the best condition. What wehave tried in
this thesis is a simple method known as diffusion to complete
both doping and activation. Different metal source had been
examined by XRD, SIMS, FTIR, PL and Hall measurement to explore
the phenomena and analyze diffusion behaviors. Our survey
displays that activation of Si up to ~43% and n-type GaN forms
carrier concentration of 2.57×10^17 cm^-3. The resistivity and
mobility obtained from Hall measurement present that a negative
dependence on temperature opposite to carrier concentration.
GaN:Si related bonds are proposed in FTIR at 1800 and 3000 cm^-1
with an increment to processing temperature. Besides,
uncertainty states caused by diffusion are also observed in PL
at room temperature and 20K.
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