Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
博士 === 國立交通大學 === 電子工程學系 === 85 === Electrical stress induced oxide reliability issues have received considerable interest in deep submicron VLSI technology. In this dissertation, five reliability research topics have been studied. First, an interface tra...
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| Format: | Others |
| Language: | zh-TW |
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1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50318565909887293512 |