Characterization of spin-on Hydrogen Silsesquioxane (HSQ) for Low dielectric constant Intermetal Dielectric Applications
碩士 === 國立交通大學 === 電子工程學系 === 85 === As the CMOS geometry shrinks to 0.35um and beyond, low dielectric constant properties become increasingly important in the selection of intermetal dielectric oxide. In this thesis, we intro...
Main Authors: | Chen, Tsung-Wen, 陳琮汶 |
---|---|
Other Authors: | Kow-Ming Chang |
Format: | Others |
Language: | zh-TW |
Published: |
1997
|
Online Access: | http://ndltd.ncl.edu.tw/handle/41418237018331621276 |
Similar Items
-
Study of Hydrogen Silsesquioxane ( HSQ ) - A Low Dielectric Constant Material
by: Chang Chien-Fu, et al.
Published: (2000) -
Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric
by: Hsuan-Yi Wei, et al.
Published: (2002) -
Study of Metal CVD and Low-Dielectric Constant Material Hydrogen Silsesquioxane(HSQ) for ULSI Applications
by: chen, Sheng-Yow, et al.
Published: (1998) -
Physical and Electrical Properties of Spin-On Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications
by: Jiang, Yun-Chi, et al.
Published: (1997) -
Study of Advanced Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications
by: Hsien Ming Tu, et al.
Published: (1999)