The Application of ITO on InGaP/GaAs MSM photodetector

碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.

Bibliographic Details
Main Authors: Fu, J. H., 傅景鴻
Other Authors: Lee Ching-Ting
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/98614552279043853059
Description
Summary:碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.