The Application of ITO on InGaP/GaAs MSM photodetector

碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.

Bibliographic Details
Main Authors:	Fu, J. H., 傅景鴻
Other Authors:	Lee Ching-Ting
Format:	Others
Language:	zh-TW
Published:	1997
Online Access:	http://ndltd.ncl.edu.tw/handle/98614552279043853059

id	ndltd-TW-085NCU00123010
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spelling	ndltd-TW-085NCU001230102015-10-13T17:59:40Z http://ndltd.ncl.edu.tw/handle/98614552279043853059 The Application of ITO on InGaP/GaAs MSM photodetector 銦錫氧化膜在磷化銦鎵/砷化鎵金屬-半導體-金屬檢光器之應用 Fu, J. H. 傅景鴻碩士國立中央大學光電(科學)研究所 85 With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained. Lee Ching-Ting 李清庭 1997 學位論文 ; thesis 53 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.
author2	Lee Ching-Ting
author_facet	Lee Ching-Ting Fu, J. H. 傅景鴻
author	Fu, J. H. 傅景鴻
spellingShingle	Fu, J. H. 傅景鴻 The Application of ITO on InGaP/GaAs MSM photodetector
author_sort	Fu, J. H.
title	The Application of ITO on InGaP/GaAs MSM photodetector
title_short	The Application of ITO on InGaP/GaAs MSM photodetector
title_full	The Application of ITO on InGaP/GaAs MSM photodetector
title_fullStr	The Application of ITO on InGaP/GaAs MSM photodetector
title_full_unstemmed	The Application of ITO on InGaP/GaAs MSM photodetector
title_sort	application of ito on ingap/gaas msm photodetector
publishDate	1997
url	http://ndltd.ncl.edu.tw/handle/98614552279043853059
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The Application of ITO on InGaP/GaAs MSM photodetector

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