The Research and Development of Low Noise MOSFET and Its Application In 430MHz Downconverter Circuits
碩士 === 長庚大學 === 電機工程研究所 === 86 === A novel structure of low noise MOSFET, which is completely compatible with the conventional MOSFET structure is proposed in this thesis. In the proposed low noise structure, an overlaid metal gate is used and overlaid directly on the conventional poly-Si...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91721976448165848663 |