| Summary: | 碩士 === 國立海洋大學 === 電機工程學系 === 86 === Lead-Zirconate-Titanate(Pb(Zr0.52Ti0.48)O3,PZT) thin film is
deposited on the junction effect field transistor(JFET) with
the radio frequency magnetron planer sputtering system to
fabricated and analyzed. pyroelectric integrated
sensors in different fabrication conditions and measurement
its performance.
According to the experimental results, the deposition rate is
0.35mm per hour. From the XRD pattern we know that, the
structure of thin film is perovskite structure. The value of
full width of half maximum(FWHM) is 0.225 and the (110)
preferred orientation a is 0.15. In the
electric measurements, the dielectric constant is 414 and loss
tangent is 0.15 at the frequency of 1KHz. From the hysteresis
loop, the remanent polarization(Pr) is 14mC/cm2, and
saturation polarization is 35mC/cm2. The coercive electric
field is 42.8KV/cm. In the fabrication of
PIR sensor, the thickness of PZT thin film is 1.4mm and
the thickness of silicon diaphragm is about 200mm. The voltage
response of fabricated PIR sensor is 1200VW-1 and its specific
detectivity is 1.4×108 cmHz1/2W-1. When the thickness of PZT is
1.4mm and thickness of silicon thickness maintain
the same, its maximum voltage response is 520V W-1 and its
specific detectivity is 4.3 ×107 cmHz1/2W-1.
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