| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系 === 87 === Interfacial reactions of Mo/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of the energy density and pulse number. Vacuum annealing and rapid thermal annealing were also performed on some samples for comparison. Upon vacuum annealing at a temperature of 500-700℃ a continuous hexagonal Mo(Si1-xGex)2(h-Mo(Si1-xGex)2) film was formed, while Ge segregation from the h-Mo(Si1-xGex)2 film to the underlying Si0.76Ge0.24 occurred with the extent becoming more severe at higher annealing temperatures. Concurrently, amorphous structures appeared in the Si0.76Ge0.24 substrate. At 700℃ h-Mo(Si1-xGex)2 transformed to tetragonal Mo(Si1-xGex)2(t-Mo(Si1-xGex)2). Upon rapid thermal annealing h-Mo(Si1-xGex)2 and t-Mo(Si1-xGex)2 were formed at 750 and 950℃ respectively. At 750℃ the same phenomena, i.e., Ge segregation and the formation of amorphous structure, as observed in vacuum annealing also occurred. Multiple pulsed KrF laser annealing could produce a continuous h-Mo(Si1-xGex)2 film without forming amorphous structures in the Si0.76Ge0.24 substrate, but it could not suppress Ge segregation. In the present study, no t-Mo(Si1-xGex)2 was formed upon pulsed KrF laser annealing even at higher energy densities.
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