鈦鎳形狀記憶合金薄膜與矽晶圓界面之研究

• Main Authors: chiu huw chung, 鐘久華
• Other Authors: 吳錫侃
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/98928555456977035644

碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 87 === The interfacial reaction of TiNi thin film with (111)Si wafer indicates that the island regions of NiSi2 compound appear after 400∼500℃ annealing. When the temperature is raised to 600℃,the islands form a continuous layer and have a twin or epitaxial relationship with (111)Si wafer. Ni is the domain diffusion specy under 400∼500℃, the Si atoms begin to diffuse when the temprature is higher than 500℃.At 600℃ annealing,TiNiSi ternary compound begins to appear but Ti4Ni4Si7 forms at 700℃ annealing. HRTEM images show that NiSi2 ,TiNiSi, Ti4Ni4Si7 coexsit at the interfice. Because Ti is more active to SiO2 than Ni, the interfacial reaction of TiNi thin film and SiO2／（100）Si substrate is different from that of TiNi/(111)Si. TiSi2 is found at the interface after 500℃ annealing. When the temperature is raised to 600℃, XRD shows that TiSi2 are coexsit with TiO and Ti4Ni2O at the interfice. No NiSi2 can be found in this system. The diffusion bonding of bulk Ti50Ni50 and (111)Si wafer indicates that interfacial reactions between bulk and thin film are quite similar. TiNiSi and Ti4Ni4Si7 are coexsit at 960℃.