Effects of Pulsed KrF Laser Irradiation and Ion Implantation on the Growth and Properties of Liquid-Phase-Deposited SiO2

• Main Authors: I-HSIANG KUO, 郭翊翔
• Other Authors: WEN-TAI LIN
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/66118729964427498946

碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === Effects of the H2SiF6 concentration, pulsed KrF laser irradiation, and ion implantation on the growth and electrical properties of liquid phase deposition (LPD) SiO2 were studied. The F concentration in the LPD SiO2 increased with the H2SiF6 concentration, resulting in the increase of effective oxide charges and hence the leakage current, and the decrease of the dielectric constant of LPD SiO2, respectively. During LPD pulsed KrF irradiation did not apparently increase the growth rate of SiO2, however, it decreased the F concentration in SiO2. After N2+ implantation with a dose of 1x1015/cm2 some Si-F bonds in LPD SiO2 were replaced by the Si-N bonds from FTIR analysis, resulted in lower effective oxide charges and hence lower leakage current of LPD SiO2. Concomitantly, the dielectric constant of LPD SiO2 was increased. After C+ implantation with a dose of 1x1015/cm2 the effect oxide changes of LPD SiO2 were increased, however, its dielectric constant and leakage current were decreased.