Effects of the Ge concentration in the Si1-xGex substrate and annealing temperature on room temperature oxidation of Cu3Ge films
碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === Room temperature oxidation of Cu3Ge films grown on Si, Si0.85Ge0.15and Si0.52Ge0.48 substrates, respectively, at a temperature of 200-400℃ was studied using transmission electron microscopy (TEM) in conjunction with energy dispersive spectrometry (EDS) and scan...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64596329301067330601 |