Fabrication of InGaP/GaAs Superlattice-Emitter Resonant-Tunneling Heterojunction Bipolar Transistors (SE-RTHBT’s)
碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, superlattice-emitter resonant-tunneling heterojunction bipolar transistors (SE-RTBT’s) based on InGaP/GaAs material system were successfully fabricated and studied. We designed the emitter structure into two parts. One is a 5-period InGaP/GaAs supe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84281573984152204419 |