Deposition and Property Analyses of Si-C-N Thin Films on Si Wafer by Microwave ECR plasma PVD

碩士 === 國立交通大學 === 材料科學與工程系 === 88 === Amorphous Si-C-N films were deposited on Si(100) substrate by microwave ECR plasma PVD method with Si(100) or Si + graphite as targets and with CH4 + N2 as source gases. Effects of deposition parameters on film properties were examined. Electron spectroscopy fo...

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Bibliographic Details
Main Authors: Chen Shih-Jing, 陳世錦
Other Authors: Cheng-Tzu Kuo
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/65060702677204080757