The Studies of X-ray PhotoelectronSpectroscopy for the Interface of Gallium-Gadolinium Oxide / GalliumArsenic

• Main Authors: Kuang-Han Huang, 黃光漢
• Other Authors: Tsong-Sheng Lay
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/55705823360679018577

碩士 === 國立中山大學 === 光電工程研究所 === 88 === This work is to study the interface properties of Gallium-Gadolinium oxide / GaAs structures. The samples we probed were produced by depositing oxide films in situ on freshly grown n type GaAs (100) surface. Three different oxides were deposited : Ga2O3, Gd2O3, and (Ga2O3-Gd2O3) oxide mixture. Structural properties of the interfaces have been investigated by X-ray photoelectron spectroscopy (XPS). Using Ar+ sputtering to remove the oxide layer step by step, we are able to observe the depth profiles of these samples. No Asenic or Asenic oxides are observed at the interfaces of these samples. The Ga(3d) of Ga2O3 / GaAs interface shows three different oxidation states, whose binding energies are 21.5eV, 21.0eV and 20.3eV, respectively. The binding energy of O (1s) core level is about at 530eV. For (Ga2O3-Gd2O3) / GaAs, Ga(3d) peaks exhibit at 21.0eV and 20.3eV. Also, two O (1s) peaks were clearly observed: one is Ga-O at 532.2eV and the other is Gd-O at 530.1eV. For the Gd2O3 / GaAs, only one Ga(3d) peak shows at 20.3eV, and the O (1s) spectra exhibit two peaks related to Ga-O at 532eV and Gd-O at 530eV, similar to the data of (Ga2O3-Gd2O3) sample. In conclusion, the Ga2O3 / GaAs interface has a Ga2O3 and two non-fully oxidized GaxOy states (i.e. Ga+1, Ga+2). The (Ga2O3-Gd2O3) layer consists two non-fully oxidized GaxOy states. For the Gd2O3 / GaAs interface, the GaxOy (Ga+1) state is formed possibly by the competitive oxidation of Ga, which diffused from the GaAs substrate, with the Gd2O3.