Study of High Performance Circuits for 2.0V Embedded Dynamic Random Access Memory
碩士 === 國立中山大學 === 電機工程學系研究所 === 88 === Abstract Four high-performance circuits design techniques for embedded DRAM are proposed. First, a negative voltage generator having high efficiency is proposed to provide the negative voltage for the modified word line driver. The negative voltage genera...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28026652098279643110 |