the electrical characterization study of metal-Ta2O5-semiconductor field effect transistors
碩士 === 國立清華大學 === 電子工程研究所 === 88 === Abstract The Ta2O5 films are deposited by plasma enhanced chemical vapor deposition system. The C-V, ID-VD and ID—VG characteristics are measured. The electron mobility obtained from gm plot was 333 cm2/V·s at VG=0.35V. The subthreshold swin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00845717158473419575 |