The Effect of Ar Plasma Damage on AlGaAs/GaAs Heterojunction Bipolar Transistors
碩士 === 逢甲大學 === 化學工程學系 === 89 === In this study, we used Ar plasma from ICP system to treat AlGaAs/GaAs heterojunction bipolar transistors (HBT). The plasma damage was characterized by evaluating device current gain and base-collector reverse breakdown voltageas as function of RF power、ICP source po...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98574372770963651820 |