UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation
碩士 === 國立交通大學 === 物理研究所 === 89 === ZnSe thin films were grown on glass and (100) GaAs substrates by thermal evaporation in UHV situation. X-ray diffraction and photoluminescence measurements are employed to analyze the quality of the grown films. XRD confirmed that the film gro...
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ndltd-TW-089NCTU01980022016-01-29T04:28:13Z http://ndltd.ncl.edu.tw/handle/91058350366942907042 UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation 超高真空熱蒸鍍系統架設以及以超高真空熱蒸鍍技術成長硒化鋅薄膜之特性研究 Jiun-Ming Liao 廖俊銘 碩士 國立交通大學 物理研究所 89 ZnSe thin films were grown on glass and (100) GaAs substrates by thermal evaporation in UHV situation. X-ray diffraction and photoluminescence measurements are employed to analyze the quality of the grown films. XRD confirmed that the film grown on the glass substrate is in zinc-blende polycrystalline structure with high orientation in [111] direction; the lattice constant and the grain size were estimated to be and , respectively. Photoluminescence(PL) measurements were used to study the property of these films, such as chemical impurities and native defects in the ZnSe /GaAs films with which GaAs substrates were outgassed at 505℃(sample 0719) and 585℃(sample 0524), respectively before ZnSe films were grown on these substrates. The spectrum of sample 0719 shows a rich excitonic structure associated with neutral donor-bound excitons I2, neutral acceptor-bound excitons I2 and free excitons FX, and the peaks related to impurities involving the line and the deep level emission SA. The peak in PL spectra at ~2.7eV was observed only for the sample 0524, it is believed that this peak is associated with donor-acceptor transitions which originated from the radiative recombination between a Ga donor and a contaminated Li and Na acceptor. ZnSe/GaAs films with different grown temperatures (310℃闎℃) were characterized by DCXRD. We discovered that the films grown at 350℃ showed the stronger ZnSe peak with a smaller FWHM value than that grown at 310℃. Der-San Chuu 褚德三 2001 學位論文 ; thesis 52 zh-TW |
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碩士 === 國立交通大學 === 物理研究所 === 89 === ZnSe thin films were grown on glass and (100) GaAs substrates by thermal evaporation in UHV situation. X-ray diffraction and photoluminescence measurements are employed to analyze the quality of the grown films.
XRD confirmed that the film grown on the glass substrate is in zinc-blende polycrystalline structure with high orientation in [111] direction; the lattice constant and the grain size were estimated to be and , respectively.
Photoluminescence(PL) measurements were used to study the property of these films, such as chemical impurities and native defects in the ZnSe /GaAs films with which GaAs substrates were outgassed at 505℃(sample 0719) and 585℃(sample 0524), respectively before ZnSe films were grown on these substrates. The spectrum of sample 0719 shows a rich excitonic structure associated with neutral donor-bound excitons I2, neutral acceptor-bound excitons I2 and free excitons FX, and the peaks related to impurities involving the line and the deep level emission SA. The peak in PL spectra at ~2.7eV was observed only for the sample 0524, it is believed that this peak is associated with donor-acceptor transitions which originated from the radiative recombination between a Ga donor and a contaminated Li and Na acceptor.
ZnSe/GaAs films with different grown temperatures (310℃闎℃) were characterized by DCXRD. We discovered that the films grown at 350℃ showed the stronger ZnSe peak with a smaller FWHM value than that grown at 310℃.
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author2 |
Der-San Chuu |
author_facet |
Der-San Chuu Jiun-Ming Liao 廖俊銘 |
author |
Jiun-Ming Liao 廖俊銘 |
spellingShingle |
Jiun-Ming Liao 廖俊銘 UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
author_sort |
Jiun-Ming Liao |
title |
UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
title_short |
UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
title_full |
UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
title_fullStr |
UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
title_full_unstemmed |
UHV thermal evaporation setup and characteristics of ZnSe films grown by UHV thermal evaporation |
title_sort |
uhv thermal evaporation setup and characteristics of znse films grown by uhv thermal evaporation |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/91058350366942907042 |
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