Electrical and Photoluminescent Properties of Sol-Gel Derived BST Thin Films
碩士 === 國立交通大學 === 電子工程系 === 89 === Sol-gel derived BST thin films were prepared under various process parameters including annealing temperature and time. The effects of processing parameters on leakage current, dielectric constant, dielectric loss and crystallinity were studied through C-V, I-V, XR...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/96698685914360951429 |