Modulation Spectroscopy Characterization of InGaP/GaAs and InGaP/InGaAsN/GaAs NpN Heterojunction Bipolar Transistor Structures
碩士 === 國立臺灣科技大學 === 電子工程系 === 89 === We have characterized the InGaP/GaAs and InGaP/InGaAsN/GaAs NpN heterojunction bipolar transistor (HBT) structures using the technique of polarization {E||[110] and E|| } dependent photoreflectance (PR) and contactless electroreflectance (CER) spectros...
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Format: | Others |
Language: | zh-TW |
Published: |
2001
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Online Access: | http://ndltd.ncl.edu.tw/handle/76831372235333076790 |