Fabrication and Characterization of SOI FinFETs with Schottky Barrier Source/Drain
碩士 === 國立交通大學 === 電資學院學程碩士班 === 90 === In this thesis, we proposed and demonstrated a novel nano-scale silicon-on-insulator (SOI) FinFET device. The new device features a metallic silicided source/drain and field-induced S/D extensions. For the device fabrication, the patterning of nano-s...
Main Authors: | Fu Ju Hou, 侯福居 |
---|---|
Other Authors: | Tiao Yuan Huang |
Format: | Others |
Language: | zh-TW |
Published: |
2002
|
Online Access: | http://ndltd.ncl.edu.tw/handle/05591667974984877700 |
Similar Items
-
Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
by: Zhang, Zhen
Published: (2008) -
Comparison of bulk FinFET and SOI FinFET
by: Chen Ying-Yu, et al.
Published: (2018-01-01) -
Channel length reduction and source/drain resistance of FinFETs under source/drain extensions
by: CHANG,CHIA-HSIEN, et al.
Published: (2018) -
Study on the Source/Drain Engineering of InGaAs MOSFETs and FinFETs
by: Lin, Jia-Wei, et al.
Published: (2017) -
FinFET Performance Enhancement by Source/Drain Cavity Structure Optimization
by: Man Gu, et al.
Published: (2020-06-01)