| Summary: | 碩士 === 國防大學中正理工學院 === 電子工程研究所 === 91 === In this article, the characteristics of red-light AlGaInP-based quantum well LED with GaP wafer bonding is investigated. These epitaxial layers of LED are first deposited by MOCVD (met-organic chemical vapor deposition) and there are two following process to complete the full structure of LED (light-emitting diode). One is to grow a thick GaP transparent layer on the top of LED by LPE (liquid-phase epitaxy), and the other is to bond a GaP wafer on the top of LED. The final LED device is achieved by removing the GaAs substrate. Because the large lattice mismatch between GaP and the top layer of LED, the technology of wafer bonding is applied, and high brightness red-light LED is fabricated.
First, we study the characteristic of bonding interface by heat treatment at a temperature ranging from 650℃ to 750℃ under hydrogen ambient prior to device fabrication . Secondly, we investigated the difference of electrical characteristics as a result of different wafer cleaning methods. Finally, the LED with P-GaP transparent wafer-bonded layer was obtained under the best bonding condition.
These samples are characterized and measured by OEM (optical electron microscope)，I-V, SEM. It has been found that the device process at a bonding temperature 750℃ in hydrogen ambient has the best performance. According to the above studies, the optoelectronic integrate circuits (OEIC) with different compositions of lattice mismatch materials can be widely developed by the wafer bonding technology.
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