WAFER BONDING TECHNOLOGY FOR HIGH BRIGHTNESS LEDS
碩士 === 國防大學中正理工學院 === 電子工程研究所 === 91 === In this article, the characteristics of red-light AlGaInP-based quantum well LED with GaP wafer bonding is investigated. These epitaxial layers of LED are first deposited by MOCVD (met-organic chemical vapor deposition) and there are two following process to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54053803711818275477 |