Thin Film Bulk Acoustic Wave Resonators Using AlN as the Piezoelectric Layer
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 91 === This paper reports on a film type bulk acoustic wave resonator (FBAR) fabricated by lithography, dry etching and RF magnetron sputtering of aluminum nitride (AlN) films. First, we use LPCVD to deposition Si3N4 as the membranes and the mask for etching on the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04207069167074983290 |