Retrograde Body of Power MOSFET
碩士 === 國立交通大學 === 電子工程系 === 91 === The channel length of traditional trench gate power MOSFET is confined to punch-through breakdown of source/drain, and it is decided by the depletion width when large drain voltage is applied. Besides, the peak base concentration in channel determines th...
Main Authors: | Wu Min-Da, 吳旻達 |
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Other Authors: | Tsui Bing-Yue |
Format: | Others |
Language: | zh-TW |
Published: |
2003
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Online Access: | http://ndltd.ncl.edu.tw/handle/39281232676683778095 |
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