Growth and Characterizations of GaN-related Materials
博士 === 國立交通大學 === 電子物理系 === 91 === We have grown the hexagonal and cubic GaN by using our homemade atmospheric metalorganic vapor phase epitaxy system (AP-MOVPE). The characteristics of these samples were investigated by using X-ray measurements, Hall measurements, photoluminescence, and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36252625542838899931 |