Design and Implementation of High-Speed InP-based Heterojunction Bipolar Transistor
碩士 === 國立中央大學 === 電機工程研究所 === 91 === Because the InP-based heterojunction bipolar transistor(HBT) has several merits of high electron mobility, high operation frequency, low turn-on voltage and combine with long wavelength fiber communication system, it’s the best choice for wire/wireless communicat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12165807911000003744 |