Characterization of InGaAsP/InP strain layer using the techniques of photoluminescence , contactless electroreflectance and piezoreflectance
碩士 === 國立海洋大學 === 電機工程學系 === 91 === Contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of InxGa1-xAsyP1-y/InP heterostructures in the temperature range of 20-300 K have been carried out. The energies of the excitonic transitions are extracted from the PzR spectr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37527061785964855822 |